Fermi‐Level Pinning‐Free WSe <sub>2</sub> Transistors via 2D Van der Waals Metal Contacts and Their Circuits-Reference-Cited by-同舟云学术

Fermi‐Level Pinning‐Free WSe ₂ Transistors via 2D Van der Waals Metal Contacts and Their Circuits

Published:2022-04-04 Issue:19 Volume:34 Page:2109899
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Jang Jisu¹²,Ra Hyun‐Soo¹,Ahn Jongtae¹,Kim Tae Wook¹,Song Seung Ho¹³,Park Soohyung⁴,Taniguch Takashi⁵,Watanabe Kenji⁵,Lee Kimoon⁶,Hwang Do Kyung¹²^ORCID

Affiliation:

1. Center for Opto‐Electronic Materials and Devices Post‐Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea

2. Division of Nano & Information Technology KIST School University of Science and Technology (UST) Seoul 02792 Republic of Korea

3. SKKU Advanced Institute of Nano Technology (SAINT) Sungkyunkwan University (SKKU) Suwon 16419 Korea

4. Advanced Analysis Center Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea

5. Advanced Materials Laboratory National Institute for Materials Science Tsukuba 305‐0044 Japan

6. Department of Physics Kunsan National University Gunsan 54150 Republic of Korea

Funder

Korea Institute of Science and Technology

National Research Foundation of Korea

Institute for Information and Communications Technology Promotion

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202109899

Reference44 articles.

1. P-Type Polar Transition of Chemically Doped Multilayer MoS2Transistor

2. Controllable, Wide‐Ranging n‐Doping and p‐Doping of Monolayer Group 6 Transition‐Metal Disulfides and Diselenides

3. Transition‐Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

4. Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization

5. Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

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