Temperature and Thickness Dependence of Statistical Fluctuations of the Gilbert Damping in Co - Fe - B / MgO Bilayers-Reference-Cited by-同舟云学术

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Temperature and Thickness Dependence of Statistical Fluctuations of the Gilbert Damping in Co - Fe - B / MgO Bilayers

Published:2019-04-01 Issue:4 Volume:11 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Sampan-a-pai Sutee,Chureemart Jessada,Chantrell Roy W.,Chepulskyy Roman,Wang Shuxia,Apalkov Dmytro,Evans Richard F. L.,Chureemart Phanwadee

Funder

Samsung Electronics

Mahasarakham University

Thailand Research Fund

EPSRC

N8 consortium

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.11.044001/fulltext

Reference33 articles.

1. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

2. Giant Spin Hall Effect and Switching Induced by Spin-Transfer Torque in aW/Co40Fe40B20/MgOStructure with Perpendicular Magnetic Anisotropy

3. Magnetization dynamics and its scattering mechanism in thin CoFeB films with interfacial anisotropy

4. Gilbert damping constants of Ta/CoFeB/MgO(Ta) thin films measured by optical detection of precessional magnetization dynamics

5. Low spin-wave damping in amorphous Co40Fe40B20 thin films

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation study of the Gilbert damping in Ni₈₀Fe₂₀/Nd bilayers: comparison with experiments;Journal of Physics: Condensed Matter;2024-05-03

2. Dimensional scaling effects on critical current density and magnetization switching in CoFeB-based magnetic tunnel junction;Journal of Physics D: Applied Physics;2024-02-12

3. Thermodynamic properties and switching dynamics of perpendicular shape anisotropy MRAM;Journal of Physics: Condensed Matter;2024-01-05

4. Magnetization dynamics at finite temperature in CoFeB–MgO based MTJs;Scientific Reports;2023-02-14

5. Adjusting thermal stability in double-barrier MTJ for energy improvement in cryogenic STT-MRAMs;Solid-State Electronics;2022-08

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