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Charge-state dependence of energy loss of MeV dimers inGaAs(100)

  • Published:2006-04-25 Issue:4 Volume:73 Page:
  • ISSN:1050-2947
  • Container-title:Physical Review A
  • language:en
  • Short-container-title:Phys. Rev. A

Author:

Sundaravel B.,David Christopher,Balamurugan A. K.,Rajagopalan S.,Tyagi A. K.,Panigrahi B. K.,Nair K. G. M.,Viswanathan B.

Publisher

American Physical Society (APS)

Subject

Atomic and Molecular Physics, and Optics

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Lattice location of O 18 in ion implanted Fe crystals by Rutherford backscattering spectrometry, channeling and nuclear reaction analysis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-09

3. Nonlinear effects in defect production by atomic and molecular ion implantation;Journal of Applied Physics;2015-01-07

4. Setting up of a low temperature in-situ ion implantation and channeling facility at Kalpakkam;AIP Conference Proceedings;2011

5. The production of non linear damage under molecular ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-04
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