Scanning-tunneling-microscopy study of single-domain Si(001) surfaces grown by molecular-beam epitaxy
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.63.1830/fulltext
Reference16 articles.
1. Si(001)-2×1 Single-Domain Structure Obtained by High Temperature Annealing
2. UHV-REM Study of Changes in the Step Structures on Clean (100) Silicon Surfaces by Annealing
3. RHEED-intensity oscillations of alternating surface reconstructions during Si MBE growth on single-domain Si(001)-2×1 surface
4. Microscopic observation of Si MBE on Si(001) surface using microprobe RHEED
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