Electronic structure and Schottky-barrier heights of (111)NiSi2/Si A- and B-type interfaces
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.63.1168/fulltext
Reference21 articles.
1. Geometric structure of the NiSi2Si(111) interface: An X-ray standing-wave analysis
2. Structural properties of epitaxialNiSi2on Si(111) investigated with x-ray standing waves
3. New Silicide Interface Model from Structural Energy Calculations
4. MSi2/Si(111) (M=Co,Ni) interface chemical bond
5. The coordination of metal atoms at CoSi2/Si(111) and NiSi2/Si(111) Interfaces: Cluster calculations
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