Comment on “HgSe: Metal or Semiconductor?”-Reference-Cited by-同舟云学术

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Comment on “HgSe: Metal or Semiconductor?”

Published:1998-08-17 Issue:7 Volume:81 Page:1535-1535
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Dietl T.,Dobrowolski W.,Kossut J.,Kowalski B. J.,Szuszkiewicz W.,Wilamowski Z.,Witowski A. M.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.81.1535/fulltext

Reference14 articles.

1. HgSe: Metal or Semiconductor?

2. Electron scattering in HgSe

3. Interband absorption and the Γ-point band structure parameters in HgSe

4. Temperature study of interband Γ6→Γ8 magnetoabsorption in HgSe

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tunable spin helical Dirac quasiparticles on the surface of three-dimensional HgTe;Physical Review B;2015-09-22

2. Raman scattering as a tool to characterize semiconductor crystals, thin layers, and low-dimensional structures containing transition metals;physica status solidi (b);2013-10-30

3. Fundamentals of Semiconductors;Graduate Texts in Physics;2010

4. Fundamental and transport properties of ZnX, CdX and HgX (X = S, Se, Te) compounds;Superlattices and Microstructures;2009-12

5. Band gap of Hg chalcogenides: Symmetry-reduction-induced band-gap opening of materials with inverted band structures;Physical Review B;2006-07-12

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