Fundamental and transport properties of ZnX, CdX and HgX (X = S, Se, Te) compounds-Reference-Cited by-同舟云学术

Fundamental and transport properties of ZnX, CdX and HgX (X = S, Se, Te) compounds

Published:2009-12 Issue:6 Volume:46 Page:823-832
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Boutaiba F.,Zaoui A.,Ferhat M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference53 articles.

1. Ab InitioPrediction of Conduction Band Spin Splitting in Zinc Blende Semiconductors

2. HgSe: Metal or Semiconductor?

3. Electronic structure ofIIB−VIsemiconductors in theGWapproximation

4. Exact exchange-only potentials and the virial relation as microscopic criteria for generalized gradient approximations

5. P. Blaha, K. Schwarz, G.K.H. Madsen, D. Kvasnicka, J. Luitz, Wien2k. An Augmented Plane Wave plus local Orbitals Program for Calculating Crystal Properties, Karlheinz Schwarz, Techn. Universitat Wien, Austria, 2001 (ISBN 3-9501031-1-2)

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