Theoretical simulation of optoelectronic and structural properties of ASiN2 (A = Be, Mg, Ca, Sr) semiconductors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference51 articles.
1. Mechanical stability and optoelectronic behavior of BeXP2 (X=Si and Ge) chalcopyrite
2. First-principle calculations of structural, electronic, optical, elastic and thermal properties of $$\hbox {MgXAs}_{2}$$ MgXAs 2 ( $$\hbox {X}=\hbox {Si}, \hbox {Ge}$$ X = Si , Ge ) compounds
3. Calculations of the Structural, Electronic, Optical, and Elastic Parameters of CdSiX 2 (X = P, As) Compounds Based on First‐Principles Theory
4. Investigation of structural, optoelectronic and thermoelectric properties of GaCuX2 (X = S, Se and Te) chalcopyrites semiconductors using the accurate mBJ approach
5. Anomalous temperature dependence of fundamental gap of AgGaS2 and AgGaSe2 chalcopyrite compounds
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