Clustering of oxygen atoms in silicon at 450 °C: A new approach to thermal donor formation-Reference-Cited by-同舟云学术

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Clustering of oxygen atoms in silicon at 450 °C: A new approach to thermal donor formation

Published:1994-04-25 Issue:17 Volume:72 Page:2729-2732
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Lindström J. L.,Hallberg T.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.72.2729/fulltext

Reference21 articles.

1. Thermal Donors in Silicon - 1986

2. On the Kinetics of Oxygen Clustering and Thermal Donor Formation in Czochralski Silicon

3. New Oxygen Infrared Bands in Annealed Irradiated Silicon

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1. Development of the conductivity type inversion caused by thermal double donors’ formation in p-type high-resistivity silicon;Applied Physics Express;2023-03-01

2. Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin;Journal of Applied Physics;2015-07-07

3. Impurity engineering of Czochralski silicon;Materials Science and Engineering: R: Reports;2013-01

4. Vibrational Absorption of O and N Interstitial Atoms and Related Centres;Springer Series in Solid-State Sciences;2011-10-27

5. Local vibrational modes of the oxygen trimer in Si;physica status solidi (c);2011-01-13

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