Instantaneous Band Gap Collapse in Photoexcited MonoclinicVO2due to Photocarrier Doping-Reference-Cited by-同舟云学术

Instantaneous Band Gap Collapse in Photoexcited MonoclinicVO2due to Photocarrier Doping

Published:2014-11-17 Issue:21 Volume:113 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Wegkamp Daniel,Herzog Marc,Xian Lede,Gatti Matteo,Cudazzo Pierluigi,McGahan Christina L.,Marvel Robert E.,Haglund Richard F.,Rubio Angel,Wolf Martin,Stähler Julia

Funder

National Science Foundation

European Research Council

Grupos Consolidados

European Commission project

European Union Framework Programme for Research (Marie Curie FP7 Integration Grant)

Grand Equipement National de Calcul Intensif

Barcelona Supercomputing Center

Leibniz Graduate School DinL (Dynamics in new Light)

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.113.216401/fulltext

Reference46 articles.

1. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature

2. The two components of the crystallographic transition in VO2

3. Metal-insulator transition in vanadium dioxide

4. VO2: Peierls or Mott-Hubbard? A view from band theory

5. Dynamical Singlets and Correlation-Assisted Peierls Transition inVO2

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