Infrared optical properties and band structure of α-Sn/Ge superlattices on Ge substrates
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.67.3164/fulltext
Reference22 articles.
1. Structural and electronic properties of epitaxial thin-layerSinGensuperlattices
2. Electronic properties of the (100) (Si)/(Ge) strained-layer superlattices
3. Electronic and optical properties of strained Ge/Si superlattices
4. Local empirical pseudopotential approach to the optical properties of Si/Ge superlattices
5. Strain-induced confinement inSi0.75Ge0.25(Si/Si0.5Ge0.5) (001) superlattice systems
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1. Growth and characterization of SiGeSn pseudomorphic layers on 200 mm Ge virtual substrates;Semiconductor Science and Technology;2018-11-07
2. Free-running Sn precipitates: an efficient phase separation mechanism for metastable Ge1−xSnx epilayers;Scientific Reports;2017-11-23
3. Photoconductivity of ultra-thin Ge(GeSn) layers grown in Si by low-temperature molecular beam epitaxy;Journal of Applied Physics;2016-04-07
4. Origin of the unusually large band-gap bowing and the breakdown of the band-edge distribution rule in theSnxGe1−xalloys;Physical Review B;2008-10-24
5. Optical properties of Ge and Si nanosheets––confinement and symmetry effects;Surface Science;2003-03
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