Critical Behavior of the Conductivity of Si:P near the Metal-Insulator Transition
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.73.3600/fulltext
Reference6 articles.
1. Possible solution of the conductivity exponent puzzle for the metal-insulator transition in heavily doped uncompensated semiconductors
2. Stress Tuning of the Metal-Insulator Transition at Millikelvin Temperatures
3. Measurements of conductivity near the metal-insulator critical point
4. dc conductivity of arsenic-doped silicon near the metal-insulator transition
5. Stuppet al. reply
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1. Notes on Anderson localization;Physics Today;2012-05
2. Variable-range hopping in the critical regime;Physical Review B;2000-06-15
3. Analysis of Variable-Range Hopping Conductivity in Si : P;physica status solidi (b);2000-03
4. Deconvolution of activated and variable-range-hopping conduction for barely insulating arsenic-doped silicon;Physical Review B;1999-11-15
5. Metal-insulator transition in amorphousSi1−xNix:Evidence for Mott’s minimum metallic conductivity;Physical Review B;1999-11-15
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