Vertical transport in semiconductor superlattices probed by miniband-to-acceptor magnetoluminescence
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.65.2050/fulltext
Reference12 articles.
1. Superlattice and Negative Differential Conductivity in Semiconductors
2. Electric-Field-Induced Localization and Oscillatory Electro-optical Properties of Semiconductor Superlattices
3. Measurement of the miniband width in a superlattice with interband absorption in a magnetic field parallel to the layers
4. Electron Mass Tunneling along the Growth Direction of (Al,Ga) As/GaAs Semiconductor Superlattices
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1. Photoluminescence: A Tool for Investigating Optical, Electronic, and Structural Properties of Semiconductors;Semiconductor Research;2012
2. Measurement of Carrier Localization Degree, Electron Effective Mass, and Excition Size in InxGa1−xAs1−yNy Alloys;Dilute Nitride Semiconductors;2005
3. Single carrier localization in InxGa1−xAs1−yNy investigated by magnetophotoluminescence;Applied Physics Letters;2004-03-29
4. Quantum states and interband optical spectra in spherical GaAs-(Ga,Al)As quantum dots doped with on-centre shallow donor impurities: a real-time wavepacket propagation method;Journal of Physics: Condensed Matter;2000-11-22
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