GaSb Surfaces States and Schottky-Barrier Pinning
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.35.1602/fulltext
Reference11 articles.
1. Relation of Schottky Barriers to Empty Surface States on III-V Semiconductors
2. Photoemission studies of the GaAs-Cs interface
3. Observation of a Band of Silicon Surface States Containing One Electron Per Surface Atom
4. Photoemission study of the effect of bulk doping and oxygen exposure on silicon surface states
5. Surface state band on GaAs (110) face
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3. Schottky-barrier and interface formation of Cs/GaSb(110) and Rb/GaSb(110) at room temperature;Physical Review B;1994-02-15
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