Photoemission studies of the GaAs-Cs interface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.12.2370/fulltext
Reference27 articles.
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1. Alkali adsorption on GaAs(110): atomic structure, electronic states and surface dipoles;Surface Science Reports;1993-10
2. X‐ray photoemission spectroscopy studies of cesium and oxygen on GaAs(100);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1992-09
3. Determination of the density of Si-metal interface states and excess capacitance caused by them;Physica B: Condensed Matter;1992-08
4. Parameter extraction from non-ideal C−V characteristics of a Schottky diode with and without interfacial layer;Solid-State Electronics;1992-06
5. Nonmetallic behavior of Cs/GaAs(110);Physical Review B;1991-10-15
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