Microscopic Origin of Electron Accumulation inIn2O3-Reference-Cited by-同舟云学术

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Microscopic Origin of Electron Accumulation inIn2O3

Published:2013-01-30 Issue:5 Volume:110 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Zhang K. H. L.,Egdell R. G.,Offi F.,Iacobucci S.,Petaccia L.,Gorovikov S.,King P. D. C.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.110.056803/fulltext

Reference36 articles.

1. Transparent Conducting Oxides

2. Transparent and conducting ITO films: new developments and applications

3. Detection of NO2 down to ppb Levels Using Individual and Multiple In2O3 Nanowire Devices

4. Nature of the Band Gap ofIn2O3Revealed by First-Principles Calculations and X-Ray Spectroscopy

5. Surface Electron Accumulation and the Charge Neutrality Level inIn2O3

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1. Electronic structure and surface band bending of Sn-doped β−Ga2O3 thin films studied by x-ray photoemission spectroscopy and ab initio calculations;Physical Review B;2024-09-11

2. Continuous Tunable Energy Band Tailoring Boosts Extending the Sensing of the Waveband Based on (In_xGa_1–x)₂O₃ Solar-Blind Photodetectors;The Journal of Physical Chemistry Letters;2024-04-29

3. Revealing the effect of metal-support interactions at the Ni/In2O3(111) interface on the selective CO2 hydrogenation;Applied Catalysis B: Environmental;2024-04

4. Quasilinear Kane conduction band model in nitrogen-doped indium tin oxide;Physical Review B;2024-03-05

5. Review—Extremely Thin Amorphous Indium Oxide Transistors;Advanced Materials;2023-12-08

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