Comment on ‘‘Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers’’
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.70.1030/fulltext
Reference5 articles.
1. Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers
2. Surfactants in epitaxial growth
3. Effect of surface tension on the growth mode of highly strained InGaAs on GaAs(100)
4. Local dimer exchange in surfactant-mediated epitaxial growth
5. Kinetically controlled critical thickness for coherent islanding and thick highly strained pseudomorphic films ofInxGa1−xAs on GaAs(100)
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2. Strain-Induced Surface Micro/Nanosphere Structure: A New Technique to Design Mechanically Robust Superhydrophobic Surfaces with Rose Petal-Like Morphology;Advanced Materials Interfaces;2017-07-31
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4. Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots;Solar Energy Materials and Solar Cells;2016-02
5. Volmer–Weber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb;Applied Physics Letters;2014-07-21
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