Relationship between stress and dangling bond generation at the (111)Si/SiO2interface
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.70.1723/fulltext
Reference30 articles.
1. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I
2. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
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4. Interface traps andPbcenters in oxidized (100) silicon wafers
5. Models for the oxidation of silicon
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