Alloy Clustering inAlxGa1−xAs
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.46.1042/fulltext
Reference6 articles.
1. Alloy Clustering inAlxGa1−xAs-GaAs Quantum-Well Heterostructures
2. Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structures
3. Summary Abstract: Optical characterization of interface disorder in multiquantum well GaAs–AlxGa1−xAs superlattice structures
4. X‐ray diffraction study of interdiffusion and growth in (GaAs)n(AlAs)mmultilayers
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1. Photoluminescence study of interface defects in high‐quality GaAs‐GaAlAs superlattices;Journal of Applied Physics;1986-03
2. The physics of quantum well structures;Reports on Progress in Physics;1985-12-01
3. Molecular beam epitaxy;Reports on Progress in Physics;1985-12-01
4. Retrospect and Prospects of MBE;The Technology and Physics of Molecular Beam Epitaxy;1985
5. Optical studies of semiconductor superlattices;Surface Science;1984-07
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