New Growth Mode through Decorated Twin Boundaries
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.96.115503/fulltext
Reference12 articles.
1. Driving Force of Stacking-Fault Formation in SiCp−i−nDiodes
2. Extended defects in GaN films grown at high growth rate
3. The Importance of Threading Dislocations on the Motion of Domain Boundaries in Thin Films
4. Twin Boundaries Can Be Moved by Step Edges During Film Growth
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1. Twins and their boundaries during homoepitaxy on Ir(111);Physical Review B;2011-02-14
2. Ion assistance in epitaxial growth as a strategy to suppress twinning;Thin Solid Films;2010-02
3. Stacking faults in homoepitaxy on Ir(111): Detection, evolution with film thickness, and associated defect patterns;Physical Review B;2008-06-18
4. Hybrid method for modeling epitaxial growth: Kinetic Monte Carlo plus molecular dynamics;Physical Review B;2007-12-18
5. Structure and morphology of ultrathinCo/Ru(0001) films;New Journal of Physics;2007-03-30
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