Layerwise reaction at a buried interface
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.69.2539/fulltext
Reference24 articles.
1. Bonding and structure of CoSi2and NiSi2
2. Atomic structure of the NiSi2/(111)Si interface
3. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
4. Transmission electron microscopy study of the formation of epitaxial CoSi2/Si (111) by a room‐temperature codeposition technique
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