Transmission electron microscopy study of the formation of epitaxial CoSi2/Si (111) by a room‐temperature codeposition technique
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99434
Reference19 articles.
1. Study of ballistic transport in Si‐CoSi2‐Si metal base transistors
2. Transistor action in Si/CoSi2/Si heterostructures
3. Double heteroepitaxy in the Si (111)/CoSi2/Si structure
4. Silicon/metal silicide heterostructures grown by molecular beam epitaxy
5. Transistor effect in monolithic Si/CoSi2/Si epitaxial structures
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