Nitrogen Incorporation atSi(001)−SiO2Interfaces: Relation between N1sCore-Level Shifts and Microscopic Structure
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.79.5174/fulltext
Reference26 articles.
1. Correlation of dielectric breakdown with hole transport for ultrathin thermal oxides and N2O oxynitrides
2. Comparison of ultrathin SiO2films grown by thermal oxidation in an N2O ambient with those in a 33% O2/N2ambient
3. Capture and tunnel emission of electrons by deep levels in ultrathin nitrided oxides on silicon
4. Role of interfacial nitrogen in improving thin silicon oxides grown in N2O
5. Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness
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