Deduction of Impurity Wave Functions from Photoionization Properties
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.36.155/fulltext
Reference18 articles.
1. On the photoionization of deep impurity centers in semiconductors
2. Application of the Quantum-Defect Method to Optical Transitions Involving Deep Effective-Mass-Like Impurities in Semiconductors
3. Photo-ionization of deep impurity levels in semiconductors with non-parabolic bands
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impurity photoionization in semiconductors;Journal of Physics and Chemistry of Solids;1990-01
2. On the application of the photo-EPR technique to the studies of photoionization, DAP recombination, and non-radiative recombination processes;physica status solidi (a);1985-07-16
3. Chapter 4 Models for Mid-Gap Centers in Gallium Arsenide;Semiconductors and Semimetals;1984
4. Carrier capture by multiphonon emission at extrinsic deep centers induced by self‐trapping in GaAs;Journal of Applied Physics;1983-04
5. Chapter 1 Deep Levels in Wide Band-Gap III-V Semiconductors;Semiconductors and Semimetals;1983
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