Photo-ionization of deep impurity levels in semiconductors with non-parabolic bands
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/8/i=16/a=013/pdf
Reference35 articles.
1. Photo-ionization of deep impurities in semiconductors
2. On the interpretation of the observed hole mass shift with Uniaxial stress in silicon
3. Application of quantum defect techniques to photoionization of impurities in semiconductors
4. Optical properties of gold acceptor and donor levels in silicon
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