Initial Stage of Carbon Incorporation into Si(001) and One-Dimensional Ordering of Embedded Carbon
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.89.106102/fulltext
Reference32 articles.
1. Formation of carbon-induced germanium dots
2. Self-organized growth of Ge quantum dots on Si(001) substrates induced by sub-monolayer C coverages
3. Thermal-annealing dependence of C-related atomic configuration in Si1−x−yGexCy crystals grown by ultra-high-vacuum chemical-vapor deposition
4. Modulation-doped Si1−x−yGexCy p-type Hetero-FETs
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2. Structural and electronic properties of boron-induced defects on the Si(001) surface;Physical Review B;2019-10-04
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