Scanning Tunneling Microscopy Identification of Atomic-Scale Intermixing on Si(100) at Submonolayer Ge Coverages
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.84.4645/fulltext
Reference27 articles.
1. Effect of Strain on Structure and Morphology of Ultrathin Ge Films on Si(001)
2. Surface stress and interface formation
3. Comment on ‘‘Dimer charge asymmetry determined by photoemission from epitaxial Ge on Si(100)-(2×1)’’
4. Mixed Ge-Si Dimer Growth at the Ge/Si(001)-(2×1) Surface
5. Growth process of Ge on Si(100)-(2×1)in atomic-layer epitaxy fromGe2H6
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