New Concept for the Reduction of Impurity Scattering in Remotely Doped GaAs Quantum Wells
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.77.4616/fulltext
Reference19 articles.
1. CBE growth of high-quality AlGaAs/GaAs heterostructures for HEMT applications
2. Improving the mobility of an In0.52Al0.48As/In0.53Ga0.47As inverted modulation‐doped structure by inserting a strained InAs quantum well
3. Ionized-impurity scattering of quasi-two-dimensional quantum-confined carriers
4. Multiquantum well structure with an average electron mobility of 4.0×106 cm2/V s
5. High mobility GaAs heterostructure field effect transistor for nanofabrication in which dopant‐induced disorder is eliminated
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