Oxide-Charge-Induced Localized States and Screening in a Model Two-Dimensional system
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.57.893/fulltext
Reference19 articles.
1. Oxide-Charge-Induced Impurity Level in Silicon Inversion Layers
2. Subband resonance at Na+ -contaminated SiSiO2 interfaces
3. The dynamical conductivity of a Na+-doped interfacial charge layer on silicon
4. Conductivity, plasmon, and cyclotron-resonance anomalies in Si(100) metal-oxide-semiconductor systems
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1. High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors;Journal of Applied Physics;2011-01-15
2. Theory of band tails in heavily doped semiconductors;Reviews of Modern Physics;1992-07-01
3. Far-infrared and electrical transport studies of oxide-charge-induced localized states in a quasi-two-dimensional system;Physical Review B;1988-06-15
4. Density of states in a two-dimensional electron gas: Impurity bands and band tails;Physical Review B;1988-03-15
5. Calculation of intersubband resonance in an inversion layer on p-type Si (100) induced by a grating coupler;Physica B+C;1987-04
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