Comment on ‘‘Optical transitions in quantum wires with strain-induced lateral confinement’’
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.66.1374/fulltext
Reference5 articles.
1. Optical transitions in quantum wires with strain-induced lateral confinement
2. Strain‐induced lateral confinement of excitons in GaAs‐AlGaAs quantum well microstructures
3. Strain‐induced confinement of carriers to quantum wires and dots within an InGaAs‐InP quantum well
4. Excitation spectroscopy of strain-patterned semiconductor wires
5. Role of step‐flow dynamics in interface roughening and in the spontaneous formation of InGaAs/InP wire‐like arrays
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Strain mapping of V-groove InGaAs/GaAs strained quantum wires using cross-sectional Atomic Force Microscopy;Applied Surface Science;2000-10
2. One-dimensional excitons in GaAs quantum wires;Journal of Physics: Condensed Matter;1998-04-13
3. ZnCdSe Quantum Wires Achieved by Strain-Induced Lateral Confinement;Japanese Journal of Applied Physics;1998-03-30
4. Photoluminescence study of lateral confinement energy in T-shapedInxGa1−xAsquantum wires;Physical Review B;1998-02-15
5. How are Mismatched Systems Ruled by the Wedding Between Surfaces and Strains? Two Examples;International Journal of Modern Physics B;1997-12-20
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