Role of Capacitive Discharge Energy in the Switching of Semiconducting Glasses
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.27.1208/fulltext
Reference13 articles.
1. Electronic conduction in amorphous semiconductors and the physics of the switching phenomena
2. Ovonic threshold switching characteristics
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4. Investigation of the switching characteristics of the TeAsGeSi glass-films
5. Non-ohmic properties of some amorphous semiconductors
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1. Switching times in amorphous boron, boron plus carbon, and silicon thin films;Journal of Applied Physics;1975-02
2. Direct infrared measurements of filament transient temperature during switching in vanadium oxide film devices;Journal of Solid State Chemistry;1975-01
3. Transitions in Viscous Liquids and Glasses;Changes of State;1975
4. Physical properties of the As2 (Se,Te)3 glasses (Review article);Journal of Electronic Materials;1973-11
5. Theoretical investigation of the pulse response of VO2 coplanar switching devices;Physica Status Solidi (a);1973-10-16
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