Switching times in amorphous boron, boron plus carbon, and silicon thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.321652
Reference22 articles.
1. J. Non‐Cryst. Solids8–10(1972).JNCSBJ0022-3093
2. Specific Negative Resistance in Solids
3. Observation of filament formation in amorphous films during switching
4. Electrothermal model of switching in amorphous boron and silicon thin films
5. Mass Spectra Analyses of Impurities and Ion Clusters in Amorphous and Crystalline Silicon Films
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1. Dynamic scenarios of multistable switching in semiconductor superlattices;Physical Review E;2001-05-16
2. Switching in amorphous devices;International Journal of Electronics;1992-11
3. Generation‐recombination‐induced nonlinear characteristics of solid‐state bipolar devices;Journal of Applied Physics;1989-06-15
4. Bistability of Homogeneous Steady States;Springer Series in Synergetics;1987
5. Theory of conduction in polysilicon: Drift-diffusion approach in crystalline-amorphous-crystalline semiconductor system—Part II: General I-V theory;IEEE Transactions on Electron Devices;1984-04
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