Fine Structure of Negatively and Positively Charged Excitons in Semiconductor Quantum Dots: Electron-Hole Asymmetry-Reference-Cited by-同舟云学术

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Fine Structure of Negatively and Positively Charged Excitons in Semiconductor Quantum Dots: Electron-Hole Asymmetry

Published:2007-01-19 Issue:3 Volume:98 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Ediger M.,Bester G.,Gerardot B. D.,Badolato A.,Petroff P. M.,Karrai K.,Zunger A.,Warburton R. J.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.98.036808/fulltext

Reference17 articles.

1. Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots

2. Voltage-Controlled Optics of a Quantum Dot

3. Pseudopotential calculation of the excitonic fine structure of million-atom self-assembledIn1−xGaxAs/GaAsquantum dots

4. An All-Optical Quantum Gate in a Semiconductor Quantum Dot

5. Polarization-correlated photon pairs from a single quantum dot

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4. C2v and D3h symmetric InAs quantum dots on GaAs (001) substrate: Exciton emission and a defect field influence;AIP Advances;2020-08-01

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