Temperature and bias anomalies in the photoluminescence of InAs quantum dots coupled to a Fermi reservoir-Reference-Cited by-同舟云学术

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Temperature and bias anomalies in the photoluminescence of InAs quantum dots coupled to a Fermi reservoir

Published:2019-04-04 Issue:16 Volume:99 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Korsch A. R.,Nguyen G. N.,Schmidt M.,Ebler C.,Valentin S. R.,Lochner P.,Rothfuchs C.,Wieck A. D.,Ludwig A.

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.99.165303/fulltext

Reference35 articles.

1. 1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C

2. High-performance InAs quantum-dot lasers near 1.3 μm

3. 1.3 μm room-temperature GaAs-based quantum-dot laser

4. InGaAs-GaAs quantum-dot lasers

5. A Quantum Dot Single-Photon Turnstile Device

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3. Influence of molecular beam effusion cell quality on optical and electrical properties of quantum dots and quantum wells;Journal of Crystal Growth;2020-11

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