Electron and HolegFactors and Exchange Interaction from Studies of the Exciton Fine Structure inIn0.60Ga0.40AsQuantum Dots-Reference-Cited by-同舟云学术

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Electron and HolegFactors and Exchange Interaction from Studies of the Exciton Fine Structure inIn0.60Ga0.40AsQuantum Dots

Published:1999-02-22 Issue:8 Volume:82 Page:1748-1751
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Bayer M.,Kuther A.,Forchel A.,Gorbunov A.,Timofeev V. B.,Schäfer F.,Reithmaier J. P.,Reinecke T. L.,Walck S. N.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.82.1748/fulltext

Reference27 articles.

1. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs

2. Spatially Resolved Visible Luminescence of Self-Assembled Semiconductor Quantum Dots

3. Ultranarrow Luminescence Lines from Single Quantum Dots

4. Quantum dots formed by interface fluctuations in AlAs/GaAs coupled quantum well structures

5. Sharp-Line Photoluminescence and Two-Photon Absorption of Zero-Dimensional Biexcitons in a GaAs/AlGaAs Structure

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