First-Principles Study of Structural Bistability in Ga- and In-DopedCdF2
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.82.113/fulltext
Reference38 articles.
1. Deep donor levels (DXcenters) in III‐V semiconductors
2. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys
3. High-pressure Raman scattering of the stretching mode in nitrogen along the 300-K isotherm
4. Bulk Lattice Instability in II-VI Semiconductors and Its Effect on Impurity Compensation
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