Initial Process of Si Homoepitaxial Growth on Si(001)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.76.2949/fulltext
Reference24 articles.
1. Scanning tunneling microscopy study of diffusion, growth, and coarsening of Si on Si(001)
2. Anisotropy in surface migration of Si and Ge on Si(001)
3. Growth and equilibrium structures in the epitaxy of Si on Si(001)
4. Surface self-diffusion of Si on Si(001)
5. Si Binding and Nucleation on Si(100)
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