Si Binding and Nucleation on Si(100)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.74.3648/fulltext
Reference34 articles.
1. Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100)
2. Low‐temperature Si molecular beam epitaxy: Solution to the doping problem
3. Low‐temperature homoepitaxy on Si(111)
4. Very low temperature (<400 °C) silicon molecular beam epitaxy: The role of low energy ion irradiation
5. Scanning tunneling microscopy study of diffusion, growth, and coarsening of Si on Si(001)
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