Growth of Precursors in Silicon Using Pseudopotential Calculations
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.88.085501/fulltext
Reference25 articles.
1. An Atomic Model of Electron-Irradiation-Induced Defects on {113} in Si
2. Transient enhanced diffusion without {311} defects in low energy B+‐implanted silicon
3. Thermally Activated Reorientation of Di-interstitial Defects in Silicon
4. Stability of Si-Interstitial Defects: From Point to Extended Defects
5. Native defects and their interactions in silicon
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