Evaluation of Mott's Parameters for Hopping Conduction in Amorphous Ge, Si, and Se-Si
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.31.1000/fulltext
Reference19 articles.
1. Relations between Structure and the Optical and Electrical Properties of Amorphous Si and Ge Films
2. Electrons in disordered structures
3. Conduction in non-crystalline materials
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