Dispersive and Nondispersive Transport in Amorphous Semiconductors in Presence of Bias Illumination
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.53.1012/fulltext
Reference14 articles.
1. A physical interpretation of dispersive transport in disordered semiconductors
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4. Optical Studies of Excess Carrier Recombination ina-Si: H: Evidence for Dispersive Diffusion
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1. Photocurrent and photoabsorption transients in amorphous solids in the presence of optical bias;Journal of Physics: Condensed Matter;1997-11-24
2. Transient photocurrents under optical bias in time-of-flight experiment with amorphous films of As2Se3: Sn and As2S3: Sb2S3;physica status solidi (b);1996-05-01
3. Comprehensive numerical simulation of defect density and temperature-dependent transport properties in hydrogenated amorphous silicon;Physical Review B;1995-11-15
4. Consistency between experimental data for ambipolar diffusion length and for photoconductivity when incorporated into the ‘‘standard’’ defect model fora‐Si:H;Journal of Applied Physics;1995-11-15
5. Electrically detected transient photocarrier grating method;Applied Physics Letters;1994-08-15
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