Low-Energy Yield Spectroscopy as a Novel Technique for Determining Band Offsets: Application to thec−Si(100)/a−Si:HHeterostructure
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.75.3352/fulltext
Reference20 articles.
1. Can photoemission measure valence-band discontinuities?
2. Direct and Indirect Excitation Processes in Photoelectric Emission from Silicon
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4. Direct spectroscopic determination of the distribution of occupied gap states in a-Si:H
5. Surface states and the exponential valence-band tail ina-Si:H
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