Comment on ‘‘Electronic structure of ideal metal/GaAs contacts’’
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.67.281/fulltext
Reference11 articles.
1. Electronic structure of ideal metal/GaAs contacts
2. The metal-semiconductor interface: Si (111) and zincblende (110) junctions
3. Schottky Barrier Heights and the Continuum of Gap States
4. Electronic structure and Schottky-barrier heights of (111)NiSi2/Si A- and B-type interfaces
5. Studies of the Si(111) surface with various Al overlayers
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1. A model for Fermi-level pinning in semiconductors: radiation defects, interface boundaries;Physica B: Condensed Matter;2004-05
2. ALKALI-ATOM ADSORPTION ON SEMICONDUCTOR SURFACES: METALLIZATION AND SCHOTTKY-BARRIER FORMATION;Surface Review and Letters;1995-08
3. Calculation of the Schottky barrier height at the Al/GaAs(001) heterojunction: Effect of interfacial atomic relaxations;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1993-07
4. Electronic structure of epitaxial interfaces;Pramana;1992-06
5. van Schilfgaarde and Newman reply;Physical Review Letters;1991-11-04
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