Vacancy Dynamics and Reorganization on Bromine-EtchedSi(100)−(2×1)Surfaces
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.87.115503/fulltext
Reference17 articles.
1. Surface science aspects of etching reactions
2. Determination of Dynamic Parameters Controlling Atomic Scale Etching of Si(100)-( 2×1) by Chlorine
3. Mechanism for SiCl2Formation and Desorption and the Growth of Pits in the Etching of Si(100) with Chlorine
4. Surface morphologies for Br-etched Si(100)-2×1: Kinetics of pit growth and step retreat
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