Minute SiGe Quantum Dots on Si(001) by a Kinetic 3D Island Mode
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.87.136104/fulltext
Reference25 articles.
1. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
3. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
4. Nanoscale InP islands embedded in InGaP
5. Stress and Relief of Misfit Strain of Ge/Si(001)
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1. Ultrathin films of Ge on the Si(100)2 × 1 surface;Surface and Interface Analysis;2017-11-28
2. Rigorous approach to fragmentation equation for irreversible epitaxial growth in the one-dimensional point island model;Journal of Physics A: Mathematical and Theoretical;2017-08-18
3. Size calibration of epitaxial islands via a two-step growth protocol: Kinetic Monte Carlo and effective-medium theory study;Surface Science;2015-07
4. Size calibration of strained epitaxial islands due to dipole–monopole interaction;Journal of Statistical Mechanics: Theory and Experiment;2015-02-03
5. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001);Journal of Applied Physics;2014-01-07
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