Production of Free Charge Carriers during Fracture of Single-Crystal Silicon
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.59.2795/fulltext
Reference7 articles.
1. Dangling bonds on silicon
2. Cleavage step deformation in brittle solids
3. Theory of semiconductor surface reconstruction: Si(111)-7×7, Si(111)-2×1, and GaAs(110)
4. Heat generation at the tip of a moving crack
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