Theory of semiconductor surface reconstruction: Si(111)-7×7, Si(111)-2×1, and GaAs(110)-Reference-Cited by-同舟云学术

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Theory of semiconductor surface reconstruction: Si(111)-7×7, Si(111)-2×1, and GaAs(110)

Published:1983-03 Issue: Volume:117-118 Page:761-766
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Pandey K.C.

Publisher

Elsevier BV

Subject

General Engineering

Reference19 articles.

1. Geometrical and electronic structure of Si(001) and Si(111) surfaces: A status report

2. Energy-Minimization Approach to the Atomic Geometry of Semiconductor Surfaces

3. Reconstruction of Semiconductor Surfaces: Buckling, Ionicity, andπ-Bonded Chains

4. K.C. Pandey, Phys. Rev. Lett. (submitted).

5. Newπ-Bonded Chain Model for Si(111)-(2×1) Surface

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