Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells-Reference-Cited by-同舟云学术

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Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells

Published:1991-03-11 Issue:10 Volume:66 Page:1362-1365
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Sturm J. C.,Manoharan H.,Lenchyshyn L. C.,Thewalt M. L. W.,Rowell N. L.,Noël J.-P.,Houghton D. C.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.66.1362/fulltext

Reference17 articles.

1. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

2. Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure

3. Electronic properties of the (100) (Si)/(Ge) strained-layer superlattices

4. Observation of Direct Band Gap Properties in GenSimStrained-Layer Superlattices

5. Photoluminescence in short-period Si/Ge strained-layer superlattices

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