Strong Modulation of Spin Currents in Bilayer Graphene by Static and Fluctuating Proximity Exchange Fields-Reference-Cited by-同舟云学术

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Strong Modulation of Spin Currents in Bilayer Graphene by Static and Fluctuating Proximity Exchange Fields

Published:2017-05-02 Issue:18 Volume:118 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Singh Simranjeet,Katoch Jyoti,Zhu Tiancong,Meng Keng-Yuan,Liu Tianyu,Brangham Jack T.,Yang Fengyuan,Flatté Michael E.,Kawakami Roland K.

Funder

Office of Naval Research

National Science Foundation

Army Research Office

Microelectronics Advanced Research Corporation

Defense Advanced Research Projects Agency

U.S. Department of Energy

C-SPIN

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.118.187201/fulltext

Reference45 articles.

1. Proposal for an all-spin logic device with built-in memory

2. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum

3. Graphene spintronics

4. Absence of hyperfine effects in13C-graphene spin-valve devices

5. Control of Spin Precession in a Spin-Injected Field Effect Transistor

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