Temperature-Dependent Energy Thresholds for Ion-Stimulated Defect Formation in Solids
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.95.015501/fulltext
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1. Effect of implant temperature on secondary defects created by MeV Sn implantation in silicon
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